Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

TL;DR

This paper reports on the development and testing of thin n-in-p planar pixel sensors for the ATLAS detector upgrade at HL-LHC, focusing on their performance before and after irradiation, and exploring design optimizations for future high-efficiency tracking.

Contribution

It introduces optimized sensor designs and evaluates their performance post-irradiation, addressing challenges for high-luminosity collider environments.

Findings

Sensors maintain high charge collection efficiency after irradiation.

Optimized biasing structures improve hit efficiency post-irradiation.

Highly segmented sensors perform well at high pseudo-rapidity.

Abstract

Thin planar pixel modules are promising candidates to instrument the inner layers of the new ATLAS pixel detector for HL-LHC, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. 100-200 $\mu$m thick sensors, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements are reported for devices before and after irradiation up to a fluence of $14\times10^{15}$ n$_{eq}$/cm$^2$. The charge collection and tracking efficiency of the different sensor thicknesses are compared. The outlook for future planar pixel sensor production is discussed, with a focus on sensor design with the pixel pitches (50x50 and 25x100 $\mu$m$^2$) foreseen for the RD53 Collaboration read-out chip in 65 nm CMOS technology. An optimization of the biasing structures in the pixel cells is required to avoid the hit efficiency loss presently observed in the punch-through region after irradiation. For this purpose the performance of different layouts have been compared in FE-I4 compatible sensors at various fluence levels by using beam test data. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50x50 $\mu$m$^2$ pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle (80$^\circ$) with respect to the short pixel direction. Results on cluster shapes, charge collection and hit efficiency will be shown.