Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

TL;DR

This study investigates InGaAs/GaAsBi/InGaAs quantum wells grown by gas source molecular beam epitaxy, demonstrating enhanced photoluminescence and potential for long-wavelength GaAs-based light emitters near 1.3 micrometers.

Contribution

It provides experimental and theoretical analysis of type-II quantum wells with Bi, showing improved carrier confinement and potential for optoelectronic applications.

Findings

Enhanced PL intensity with higher Bi content

Blue-shift of type II transitions at high excitation power

Good agreement between experimental data and 8-band k.p model

Abstract

InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. Blue-shift of type II transitions at high excitation power density was observed and ascribed to the band-bending effect. The calculated transition energies based on 8 band k.p model fit well with the experiment results. The experimental and theoretical results show that the type-II QW design is a new promising candidate for realizing long wavelength GaAs-based light emitting devices near 1.3 um.