Ultrafast Spin-Transfer-Torque Switching of Synthetic Ferrimagnets
Kerem Yunus Camsari, Ahmed Zeeshan Pervaiz, Rafatul Faria, Ernesto E., Marinero, Supriyo Datta

TL;DR
This paper demonstrates that synthetic ferrimagnet structures enable ultrafast spin-transfer-torque switching in magnetic tunnel junctions, significantly reducing switching delay even with higher critical currents, promising faster spintronic memory devices.
Contribution
It introduces a novel SFM structure that achieves ultrafast switching speeds in MTJs, challenging the assumption that higher critical currents always lead to longer delays.
Findings
SFM structures reduce switching delay at given current densities.
A 20 nm MTJ with SFM can switch in tens of picoseconds.
Ultrafast switching is achievable with exchange-coupled materials.
Abstract
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is further exacerbated as the dimensions of MTJ nanostructures are scaled down to tens of nanometers in diameter, as higher magnetic anisotropy materials are required to meet thermal stability requirements that demand higher switching current densities. Here, we propose a simple solution to these issues based on synthetic ferrimagnet (SFM) structures. It is commonly assumed that to achieve a given switching delay, the current has to exceed the critical current by a certain factor and so a higher critical current implies a higher switching current. We show that this is not the case for SFM structures which can provide significantly reduced switching delay…
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