High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnS

TL;DR

This paper reports a method for ultrafast, high-fidelity initialization of a hole-spin qubit bound to Te isoelectronic centers in ZnS, enabling rapid quantum state preparation with over 98.5% fidelity.

Contribution

It introduces a novel optical initialization scheme for hole-spin qubits in ZnS, achieving sub-150 ps initialization times with high fidelity, advancing quantum information processing capabilities.

Findings

Initialization fidelity exceeds 98.5%.

Initialization time is less than 150 ps.

Effective spin control via radiative decay of a trion.

Abstract

We demonstrate the optical initialization of a hole-spin qubit bound to an isoelectronic center (IC) formed by a pair of Te impurities in ZnSe, an impurity/host system providing high optical homogeneity, large electric dipole moments, and long coherence times. The initialization scheme is based on the spin-preserving tunneling of a resonantly excited donor-bound exciton to a positively charged Te IC, thus forming a positive trion. The radiative decay of the trion within less than 50 ps leaves a heavy hole in a well-defined polarization-controlled spin state. The initialization fidelity exceeds 98:5 % for an initialization time of less than 150 ps.