Large Stark tuning of donor electron spin quantum bits in germanium
A. J. Sigillito, A. M. Tyryshkin, J. W. Beeman, E. E. Haller, K. M., Itoh, and S. A. Lyon

TL;DR
This paper demonstrates that germanium host material enables large, electrically tunable donor electron spin qubits with significant Stark shifts, surpassing silicon, and suitable for scalable quantum computing architectures.
Contribution
The study shows that germanium allows for Stark tuning of donor electron spins exceeding silicon, with detailed measurements of anisotropic Stark effects and comparison to theoretical models.
Findings
Spin-orbit Stark shift in germanium is four orders of magnitude larger than in silicon.
Hyperfine Stark effect is significantly larger in germanium than in silicon.
Donor spins in germanium can be tuned by at least four times the ensemble linewidth.
Abstract
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult to selectively manipulate single donor electron spins. Here, we show that by replacing the prevailing semiconductor host material (silicon) with germanium, donor electron spin qubits can be electrically tuned by more than an ensemble linewidth, making them compatible with gate addressable quantum computing architectures. Using X-band pulsed electron spin resonance, we measured the Stark effect for donor electron spins in germanium. We resolved both spin-orbit and hyperfine Stark shifts and found that at 0.4 T, the spin-orbit Stark shift dominates. The spin-orbit Stark shift is highly anisotropic, depending on the electric field orientation relative…
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