Simulation of Channeling and Radiation of 855 MeV Electrons and Positrons in a Small-Amplitude Short-Period Bent Crystal

TL;DR

This paper investigates how relativistic electrons and positrons behave and emit radiation when passing through a periodically bent silicon crystal, using simulations and analytical models.

Contribution

It provides a comprehensive simulation-based analysis of channeling and radiation in small-amplitude, short-period bent crystals, supported by an analytical potential approximation.

Findings

Channeling efficiency varies with bending amplitude.

Radiation spectra are influenced by the crystal's bending parameters.

Analytical models effectively describe the channeling process.

Abstract

Channeling and radiation are studied for the relativistic electrons and positrons passing through a Si crystal periodically bent with a small amplitude and a short period. Comprehensive analysis of the channeling process for various bending amplitudes is presented on the grounds of numerical simulations. The features of the channeling are highlighted and elucidated within an analytically developed continuous potential approximation. The radiation spectra are computed and discussed.