Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content
Shirin Mozaffari, Samaresh Guchhait, John T. Markert

TL;DR
This study investigates how oxygen pressure during growth influences the electronic and magnetic properties of PrAlO$_3$/SrTiO$_3$ interfaces, revealing the interplay of spin-orbit interaction, Kondo scattering, and carrier dynamics.
Contribution
It demonstrates the effects of oxygen content on spin-orbit coupling and Kondo scattering, providing new insights into interface magnetotransport phenomena.
Findings
Resistivity increases with higher oxygen pressure.
Kondo behavior observed at low temperatures for certain oxygen pressures.
Magnetoresistance indicates strong spin-orbit interaction and Kondo effects.
Abstract
We report the effect of oxygen pressure during growth () on the electronic and magnetic properties of PrAlO films grown on -terminated SrTiO substrates. Resistivity measurements show an increase in the sheet resistance as is increased. The temperature dependence of the sheet resistance at low temperatures is consistent with Kondo theory for torr. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at interfaces grown at torr. For these interfaces, we measured a moderate positive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction at low magnetic fields that evolves into a larger negative MR at high fields. Positive high MR values are associated with samples where a…
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