Prediction of a Two-dimensional Sulfur Nitride (S3N2) Solid for Nanoscale Optoelectronic Applications

TL;DR

This paper introduces a new stable two-dimensional S3N2 crystal with a wide direct band gap of 3.17 eV, suitable for blue and ultraviolet optoelectronic devices, confirmed by stability and electronic property calculations.

Contribution

The study proposes a novel 2D S3N2 crystal with unique stability and electronic properties, expanding the potential materials for nanoscale optoelectronic applications.

Findings

S3N2 crystal is dynamically stable.

It has a wide, direct band gap of 3.17 eV.

Exhibits good hole mobility.

Abstract

Two-dimensional materials have attracted tremendous attention for their fascinating electronic, optical, chemical and mechanical properties. However, the band gaps of most 2D materials reported are smaller than 2.0 eV, which greatly restricted their optoelectronic applications in blue and ultraviolet range of the spectrum. Here, we propose a new stable sulfur nitride (S3N2) 2D crystal that is a covalent network composed solely of S-N {\sigma} bonds. S3N2 crystal is dynamically stable as confirmed by the computed phonon spectrum and ab initio molecular dynamics simulations in the NPT ensemble. Hybrid density functional calculations show that 2D S3N2 crystal is a wide, direct band-gap (3.17 eV) semiconductor with good hole mobility. These fascinating electronic properties could pave the way for its optoelectronic applications such as blue or ultra-violet light-emitting diodes (LEDs) and photodetectors.