A two-dimensional spin field-effect transistor

TL;DR

This paper presents a novel two-dimensional spin field-effect transistor that combines graphene and MoS₂ to electrically control spin transport, enabling potential spin logic operations beyond traditional CMOS technology.

Contribution

It introduces a new heterostructure-based spin FET using 2D materials, demonstrating electrical modulation of spin transport via gate-tuned spin absorption.

Findings

Spin transport can be modulated between ON and OFF states.

The heterostructure enables electrical control of spin current.

Demonstrates a new route for spin logic devices using 2D materials.

Abstract

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin current for logic operations. The approach followed so far, inspired by the seminal proposal of the Datta and Das spin modulator, has relied on the spin-orbit field as a medium for electrical control of the spin state. However, the still standing challenge is to find a material whose spin-orbit-coupling (SOC) is weak enough to transport spins over long distances, while also being strong enough to allow their electrical manipulation. Here we demonstrate a radically different approach by engineering a heterostructure from atomically thin crystals, which are "glued" by weak van der Waals (vdW) forces and which combine the superior spin transport properties of graphene with the strong SOC of the semiconducting MoS$_{2}$. The spin transport in the graphene channel is modulated between ON and OFF states by tuning the spin absorption into the MoS$_{2}$ layer with a gate electrode. Our demonstration of a spin field-effect transistor using two-dimensional (2D) materials identifies a new route towards spin logic operations for beyond CMOS technology.