High-field electron transport in bulk ZnO
L. Ardaravi\v{c}ius, J. Liberis, M. Ramonas, E. \v{S}ermuk\v{s}nis, A., Matulionis, M. Toporkov, V. Avrutin, \"U. \"Ozg\"ur, H. Morko\c{c}

TL;DR
This study investigates high-field electron transport in bulk ZnO, measuring drift velocities up to 1.5×10^7 cm/s and analyzing the effects of electron density and hot-phonon dynamics.
Contribution
It provides experimental data on electron drift velocities at high fields in ZnO and correlates these with hot-phonon decay times, supported by Monte Carlo simulations.
Findings
Maximum drift velocity of ~1.5×10^7 cm/s at low electron density.
Observation of a local drift velocity maximum at high electron density.
Agreement of experimental results with hot-phonon decay models.
Abstract
Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift velocity on electron density ranging from 1.4210 cm to 1.310 cm at a given electric field is deduced after estimation of the sample contact resistance and the Hall electron mobility. Manifestation of the highest electron drift velocity up to 1.510 cm/s is estimated for electron density of 1.4210 cm and is in agreement with Monte Carlo simulation when hot-phonon lifetime is below 1 ps. A local drift velocity maximum is observed at 1.110 cm and is in agreement with ultra-fast hot phonon decay.
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Taxonomy
TopicsZnO doping and properties · GaN-based semiconductor devices and materials · Electronic and Structural Properties of Oxides
