Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$
C. Q. Xu, X. Z. Xing, Xiaofeng Xu, L. Q. Che, Bin Chen, Xin Lu,, Jianhui Dai, Z. X. Shi

TL;DR
This paper reports the synthesis, structural characterization, and physical properties of layered PtBi$_2$, revealing metallic behavior, anisotropic magnetization, and multiple charge carriers, with comparisons to topological superconductor $eta$-PdBi$_2$.
Contribution
It provides detailed single crystal growth, structural analysis, and physical property measurements of PtBi$_2$, a layered bismuthide with potential topological features.
Findings
Metallic resistivity behavior observed.
Opposite magnetization signs for different field orientations.
Presence of two types of charge carriers.
Abstract
We report details of single crystal growth of stoichiometric bismuthide PtBi whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the -axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of ==6.553, =6.165. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The -dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor -PdBi.
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