Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
Cui-Zu Chang, Jinsong Zhang, Xiao Feng, Jie Shen, Zuocheng Zhang,, Minghua Guo, Kang Li, Yunbo Ou, Pang Wei, Li-Li Wang, Zhong-Qing Ji, Yang, Feng, Shuaihua Ji, Xi Chen, Jinfeng Jia, Xi Dai, Zhong Fang, Shou-Cheng, Zhang, Ke He, Yayu Wang, Li Lu, Xu-Cun Ma, and Qi-Kun Xu
TL;DR
This paper reports the experimental observation of the quantum anomalous Hall effect in Cr-doped (Bi,Sb)2Te3 thin films, demonstrating quantized Hall resistance without an external magnetic field, advancing low-power electronic applications.
Contribution
First experimental demonstration of the quantum anomalous Hall effect in magnetic topological insulator thin films, confirming theoretical predictions.
Findings
Quantized Hall resistance at h/e^2 without external magnetic field
Longitudinal resistance drops significantly at the QAH state
QAH effect persists under strong magnetic fields
Abstract
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.
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