Large-Signal Model of Graphene Field-Effect Transistors -- Part II: Circuit Performance Benchmarking

TL;DR

This paper benchmarks the circuit performance of a large-signal graphene FET model by simulating various high-frequency circuits and comparing results with experimental data to validate the model's accuracy.

Contribution

It introduces a comprehensive circuit benchmarking approach for the graphene FET model reported in Part I, demonstrating its applicability in high-frequency circuit simulations.

Findings

Model accurately predicts high-frequency circuit behavior

Simulations match experimental data across multiple metrics

Validates the large-signal model for practical circuit design

Abstract

This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. Specifically we have simulated a high-frequency performance amplifier, together with other circuits that take advantage of the ambipolarity of graphene, such as a frequency doubler, a radio-frequency subharmonic mixer and a multiplier phase detector. A variety of simulations comprising DC, transient dynamics, Bode diagram, S-parameters, and power spectrum have been compared with experimental data to assess the validity of the model.