A CMOS silicon spin qubit

TL;DR

This paper demonstrates a silicon spin qubit device fabricated with standard CMOS technology, enabling scalable quantum computing by integrating quantum and classical hardware on a common platform.

Contribution

It presents the first CMOS-compatible silicon spin qubit device with electrical control, paving the way for scalable quantum processors using existing semiconductor manufacturing.

Findings

Device made with industry-standard CMOS process

Electrical two-axis control of the spin qubit achieved

Potential for scalable quantum computing demonstrated

Abstract

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.