Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

TL;DR

This paper demonstrates the growth and characterization of coupled InAs-GaSb quantum dots on nanowire templates, revealing electron-hole interactions and Coulomb blockade effects in a novel heterostructure.

Contribution

It introduces a new method for fabricating coaxial InAs-GaSb quantum dots with integrated electrical probes using nanowire templates, enabling study of electron-hole interactions.

Findings

Observation of periodic electron-hole interactions.

Detection of Coulomb blockade in both electrons and holes.

Voltage-induced ground-state transitions inferred from Coulomb diamond distortions.

Abstract

We report growth and characterization of a coupled quantum dot structure that utilizes nanowire templates for selective epitaxy of radial heterostructures. The starting point is a zinc blende InAs nanowire with thin segments of wurtzite structure. These segments have dual roles: they act as tunnel barriers for electron transport in the InAs core, and they also locally suppress growth of a GaSb shell, resulting in coaxial InAs-GaSb quantum dots with integrated electrical probes. The parallel quantum dot structure hosts spatially separated electrons and holes that interact due to the type-II broken gap of InAs-GaSb heterojunctions. The Coulomb blockade in the electron and hole transport is studied, and periodic interactions of electrons and holes are observed and can be reproduced by modeling. Distorted Coulomb diamonds indicate voltage-induced ground-state transitions, possibly a result of changes in the spatial distribution of holes in the thin GaSb shell.