Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices

TL;DR

This study investigates the resistive switching behavior of HfO2 films grown by MOCVD, demonstrating their potential for use in ReRAM memory devices through stable switching and retention performance.

Contribution

It presents the resistive switching characteristics of MOCVD-grown HfO2 films and evaluates their suitability for ReRAM applications, highlighting stable performance over multiple cycles.

Findings

Bipolar resistive switching observed in Pt/HfO2/TiN cells

Low set/reset currents of 7 uA and 4 uA at 1 V

Stable switching over 40 cycles with good retention over 10^5 seconds

Abstract

The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 V. Regarding the resistive switching performance, the stable RS performance was observed under 40 repetitive dc cycling test with the small variations of set/reset voltages and currents, and good retention characteristics over 105 s in both LRS and HRS. These results show the possibility of MOCVD grown HfO2 films as a promising resistive switching materials for ReRAM applications.