Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride
F. Hipolito, Thomas G. Pedersen, Vitor M. Pereira

TL;DR
This paper investigates the nonlinear photogalvanic effect in 2D materials like graphene and boron nitride, revealing how their intrinsic responses depend on topological properties, excitonic effects, and external tuning, with potential for optoelectronic applications.
Contribution
It provides a microscopic analysis of the nonlinear photocurrent in 2D materials, incorporating Coulomb interactions and excitonic effects, and demonstrates tunability of the photocurrent's magnitude and polarity.
Findings
Photocurrents range from pA to nA per cm/W in these materials.
Excitonic effects significantly modify the photoconductivity spectrum.
Biased bilayer graphene shows high tunability of photocurrent magnitude and polarity.
Abstract
DC photoelectrical currents can be generated purely as a non-linear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These currents are strongly dependent on the polarization state of the radiation, as well as on topological properties of the underlying Fermi surface such as its Berry curvature. In order to study the intrinsic photogalvanic response of gapped graphene (GG), biased bilayer graphene (BBG), and hexagonal boron nitride (hBN), we compute the non-linear current using a perturbative expansion of the density matrix. This allows a microscopic description of the quadratic response to an electromagnetic field in these materials, which we analyze as a function of temperature and electron density. We find that the intrinsic response is robust across these systems and…
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