On the quantum spin Hall gap of monolayer 1T'-WTe2
Feipeng Zheng, Chaoyi Cai, Shaofeng Ge, Xuefeng Zhang, Xin Liu, Hong, Lu, Yudao Zhang, Jun Qiu, Takashi Taniguchi, Kenji Watanabe, Shuang Jia,, Jingshan Qi, Jian-Hao Chen, Dong Sun, Ji Feng

TL;DR
This paper provides evidence that monolayer 1T'-WTe2 is a genuine two-dimensional quantum spin Hall insulator with a positive band gap, confirmed through theoretical calculations and experimental measurements, highlighting its potential for spintronics and quantum computing.
Contribution
The study demonstrates that monolayer 1T'-WTe2 exhibits a positive quantum spin Hall gap, establishing it as a true 2D QSH insulator through combined theoretical and experimental analysis.
Findings
Hybrid functional calculations show a positive QSH gap.
Optical measurements indicate increased interband relaxation time with fewer layers.
Transport measurements reveal Schottky barriers in ultrathin samples.
Abstract
Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that electrons can propagate unscattered. Realization of such topological phases enables promising applications in spintronics, dissipationless transport and quantum computations. Presently, realization of such QSH-based devices are limited to complicated heterostructures. Monolayer 1T'-WTe2 was predicted to be semimetallic QSH materials, though with a negative band gap. The quasi-particle spectrum obtained using hybrid functional approach shows directly that the quantum spin Hall gap is positive for monolayer 1T'-WTe2. Optical measurement shows a systematic increase in the interband relaxation time with decreasing number of layers, whereas transport…
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