NdCeCuO - NdCeO boundary and resistive switchings in mesoscopic structures on base of epitaxial NdCeCuO films

TL;DR

This paper investigates bipolar resistive switching in NdCeCuO-NdCeO-Ag heterostructures, demonstrating diode-like current-voltage behavior and the role of electric field in defect redistribution and resistive state changes.

Contribution

It introduces a detailed analysis of resistive switching mechanisms in epitaxial NdCeCuO-based structures, emphasizing electric field inhomogeneity effects.

Findings

Resistive switching exhibits diode-like I-V characteristics.

Electric field inhomogeneity influences defect motion and resistive states.

Simulation results support the role of electric field distribution in switching behavior.

Abstract

Reverse and stable bipolar resistive switching effect was observed in planar NdCeCuO - NdCeO - Ag heterostructures. It was shown that the current voltage charactereriscs of the BRSE observed has a diode character. Simulations were used to consider the influence of the nonuniform distribution of an electric field at the interface of a heterojunction on the effect of bipolar resistive switching in investigated structures. The inhomogeneous distribution of the electric field near the contact edge creates regions of higher electric field strength which, in turn, stimulates motion and redistribution of defects, changes of the resistive properties of the whole structure and formation of a percolation channel.