Enhancing the blocking temperature of perpendicular-exchange biased Cr2O3 thin films using spacer and buffer layers

TL;DR

This study demonstrates how spacer and buffer layers can significantly enhance the blocking temperature of perpendicular exchange bias in Cr2O3 thin films, with potential implications for spintronic device stability.

Contribution

It introduces a method to increase the blocking temperature of Cr2O3 films by using spacer and buffer layers, highlighting the role of lattice strain and magnetic anisotropy.

Findings

Achieved a TB of 260 K in 20-nm Cr2O3 films.

Controlled exchange bias and TB via spacer layer thickness.

Higher TB with alpha-Fe2O3 buffer due to lattice strain.

Abstract

In this study, we investigated the effect of spacer and buffer layers on the blocking temperature TB of the perpendicular exchange bias of thin Cr2O3 films, and revealed a high TB of 260 K for 20-nm-thick Cr2O3 thin films. By inserting a Ru spacer layer between the Cr2O3 and Co films and changing the spacer thickness, we controlled the magnitude of the exchange bias and TB. By comparing the TB values of the 20-nm-thick Cr2O3 films on Pt and alpha-Fe2O3 buffers, we investigated the lattice strain effect on the TB. We show that higher TB value can be obtained using an alpha-Fe2O3 buffer, which is likely because of the lattice-strain-induced increase of Cr2O3 magnetic anisotropy.