Influence of disordered edges on transport properties in graphene

TL;DR

This paper investigates how disordered edges from plasma etching affect the electrical transport and doping in graphene, revealing that edges significantly influence doping levels and limit mobility in narrow samples.

Contribution

It provides new insights into the role of edge disorder in graphene's transport properties, highlighting the importance of edge quality in device performance.

Findings

Edges contribute strongly to overall doping.

Edge disorder limits mobility in narrow graphene samples.

Edge effects are significant in plasma-etched graphene.

Abstract

The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes strongly to the overall doping of the samples. Furthermore the edge disorder can be found as the main limiting source of the mobility for narrow samples.