Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

TL;DR

This paper introduces a silicon-compatible, highly non-linear, and reliable back-to-back Schottky diode with high speed and low voltage operation, optimized for use as a selector device in large-scale RRAM arrays.

Contribution

It presents a comprehensive design and experimental validation of a stable, high-performance Schottky diode tailored for RRAM array applications, emphasizing material and structural optimization.

Findings

Achieved >10^8 cycles stability

High non-linearity ratio >5×10^5 at half-read voltage

Operation speed under 60 ns at voltages below 2V

Abstract

In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays.