A non-volatile memory based on nonlinear magnetoelectric effects

TL;DR

This paper introduces a novel non-volatile memory concept utilizing nonlinear magnetoelectric effects in multiferroics, enabling electric-field-controlled binary states with promising advantages for future memory devices.

Contribution

It proposes a new memory paradigm based on the magnetoelectric coefficient's states, demonstrated through experiments on a multiferroic heterostructure.

Findings

Magnetoelectric coefficient sign can be repeatedly switched by electric fields.

The memory device exhibits low power and fast operation.

The approach offers a simple structure and diverse material options.

Abstract

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of non-volatile memory has outstanding practical virtues such as simple structure, easy operations in writing and reading, low power, fast speed, and diverse materials available.