Atomically Thin Boron Nitride: Unique Properties and Applications

TL;DR

Atomically thin boron nitride (BN) exhibits unique properties such as high oxidation resistance, dielectric capabilities, and UV light emission, making it valuable for various advanced nanotechnological applications.

Contribution

This paper comprehensively reviews the properties, synthesis, and applications of atomically thin BN, highlighting its distinct features compared to graphene.

Findings

BN nanosheets have high oxidation resistance at elevated temperatures

BN serves as an effective dielectric substrate for 2D electronic devices

BN nanosheets emit light in the deep UV and UV regions

Abstract

Atomically thin boron nitride (BN) is an important two-dimensional (2D) nanomaterial, with many properties distinct from graphene. In this feature article, these unique properties and associated applications often not possible from graphene are outlined. The article starts with characterization and identification of atomically thin BN. It is followed by demonstrating their strong oxidation resistance at high temperatures and applications in protecting metals from oxidation and corrosion. As flat insulators, BN nanosheets are ideal dielectric substrates for surface enhanced Raman spectroscopy (SERS) and electronic devices based on 2D heterostructures. The light emission of BN nanosheets in the deep ultraviolet (DUV) and ultraviolet (UV) regions are also included for its scientific and technological importance. The last part is dedicated to synthesis, characterization, and optical properties of BN nanoribbons, a special form of nanosheets.