Influence of field effects on the performance of InGaAs-based terahertz radiation detectors

TL;DR

This paper investigates the electrical properties and mechanisms behind high-performance InGaAs-based terahertz detectors, combining experimental characterization and simulations to understand how field effects influence their sensitivity.

Contribution

It provides a comprehensive analysis of the electrical behavior and field effects in InGaAs terahertz detectors using microscopy, modeling, and FDTD simulations, revealing conductivity modulation as a key factor.

Findings

Field effect-induced conductivity modulation enhances detector sensitivity

Kelvin probe and STM mapping reveal surface potential and Fermi level

Simulations show electric field changes due to metal contacts influence performance

Abstract

A detailed electrical characterization of high-performance bow-tie InGaAs based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Currentvoltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper insight into the processes involved in detector operation. In addition, we performed finite difference time-domain (FDTD) simulations to reveal features related to changes in the electric field due to the metal detector contacts. The investigation revealed that field effect-induced conductivity modulation is a possible mechanism contributing to the high sensitivity of the studied detectors.