Controllable Goos-H\"anchen Shift in Graphene Triangular Double Barrier

TL;DR

This paper investigates how the Goos-H"anchen shift in graphene's Dirac fermions can be controlled using a triangular double barrier potential, revealing sign changes and peaks related to bound states and incident angles.

Contribution

It introduces a method to manipulate the Goos-H"anchen shift in graphene via a specific double barrier potential configuration, highlighting the effects of geometry and incident angle.

Findings

GHL shifts change sign at transmission zero energies

Enhanced peaks occur at bound states

GHL shifts are influenced by the barrier's geometrical structure

Abstract

We study the Goos-H\"anchen shifts for Dirac fermions in graphene scattered by a triangular double barrier potential. The massless Dirac-like equation was used to describe the scattered fermions by such potential configuration. Our results show that the GHL shifts is affected by the geometrical structure of the double barrier. In particular the GHL shifts change sign at the transmission zero energies and exhibit enhanced peaks at each bound state associated with the double barrier when the incident angle is less than the critical angle associated with the total reflection.