Magnetization Saturation Process in the Magnonic Anti-dot Structures Based on (Ga,Mn)As: A Magnetometric Study

TL;DR

This study investigates how patterning (Ga,Mn)As dilute magnetic semiconductor layers into anti-dot structures affects their high-field magnetization process, providing insights into magnetic anisotropy control for spintronic applications.

Contribution

It demonstrates the impact of anti-dot structuring on magnetization behavior in (Ga,Mn)As, advancing understanding of magnetic anisotropy engineering in DMS materials.

Findings

Anti-dot structuring influences high-field magnetization process.

No significant change in hysteresis loop width due to structuring.

Magnetometric data shows directional dependence of magnetization effects.

Abstract

Applicability of dilute magnetic semiconductors (DMS) in electronic devices relies upon the understanding and control of their magnetic anisotropy. This paper explores one of the ways in engineering magnetic anisotropy in epitaxial layers of DMS by forming them into magnonic structures. For this purpose the canonical ferromagnetic DMS, namely (Ga,Mn)As, is employed. The anti-dot systems based on (Ga,Mn)As layers of various thicknesses are fabricated with focused ion beam apparatus and studied by means of microscopy as well as magnetometry. The magnetometric data - collected along two nonequivalent in-plane crystallographic directions of (Ga,Mn)As: [110] and [1-10] - shows the effect of structuring on high-field magnetization process, whereas no significant change of the width of hysteresis loop in anti-dot samples is observed.