Low entropy in graphene through the Co-C system

TL;DR

This study demonstrates the synthesis of uniform, stable single-layer graphene on a cobalt film, highlighting thermodynamic factors like entropy reduction and vacancy annihilation that influence material quality and stability.

Contribution

It introduces a method for growing high-quality graphene on Co films considering thermodynamic effects, expanding possibilities for C-metal system synthesis.

Findings

Graphene can be transferred without polymer support.

The material shows enhanced stability compared to Cu-grown graphene.

Thermodynamics, especially entropy reduction, influences graphene quality.

Abstract

Uniform, mostly single-layer graphene with enhanced stability is demonstrated over Co film. The polycrystalline Co film deposited on a SiO2/Si substrate gives a continuous graphene layer that is easily transferred without the aid of any polymeric support, but preserving the material quality, as evidenced by Raman analysis. Great stability to the damaging action of the laser beam, as compared to the Cu-grown material is also observed. The better structural and electrical properties of the material are interpreted in terms of thermodynamics of the cooling-down process. It is suggested that the reduction in entropy, due annihilation of vacancies caused by C atoms precipitating during cooling, directly depends on the activation energy of C solubility into Co, which is considerably high, due to Co magnetic ordering at the process temperature. Our work expands the possibility of synthesizing single-layer graphene keeping into account the thermodynamics of various C-metal systems.