Robust Picosecond writing of a Layered Antiferromagnet by Staggered Spin-Orbit-Fields

TL;DR

This paper demonstrates ultrafast, reliable electrical switching in layered antiferromagnets using staggered spin-orbit fields, enabling picosecond writing with minimal overshoot risk and relaxed pulse precision requirements.

Contribution

It introduces a method for robust, ultrafast switching in layered antiferromagnets using current-induced spin-orbit fields, supported by atomistic simulations and effective equations.

Findings

Switching is achieved with minimal overshoot risk.

Robust picosecond writing is feasible at practical current levels.

The critical spin-orbit field strength for switching is identified.

Abstract

Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot, is shown in layered easy-plane antiferromagnets with basal-plane biaxial anisotropy. The reliable switching is due to the field-like torque, relaxing stringent requirements with respect to precision in the time-duration of the excitation pulse. We investigate the switching characteristics as a function of the spin-orbit field strength, pulse duration, pulse rise and fall time and damping by atomistic spin dynamics simulations and an effective equation of motion for the antiferromagnetic order-parameter. The condition, determining the critical spin-orbit field strength for switching is determined and we go on to show that robust picosecond writing is possible at feasible current magnitudes.