Concepts of Ferrovalley Material and Anomalous Valley Hall Effect

TL;DR

This paper introduces ferrovalley materials with spontaneous valley polarization, demonstrating that 2H-VSe2 monolayer exhibits room-temperature ferrovalley behavior and can enable novel valleytronic devices.

Contribution

It proposes the concept of ferrovalley materials, combining theoretical models and first-principles calculations to identify 2H-VSe2 monolayer as a room-temperature ferrovalley material with potential applications.

Findings

2H-VSe2 monolayer exhibits spontaneous valley polarization.

Demonstrates anomalous valley Hall effect in ferrovalley material.

Potential for valleytronic device applications like memory and filters.

Abstract

Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization in electronics, as well as ferromagnetic materials with spontaneous spin polarization in spintronics, here we introduce a new member of ferroic-family, i.e. a ferrovalley material with spontaneous valley polarization. Combining a two-band kp model with first-principles calculations, we show that 2H-VSe2 monolayer, where the spin-orbit coupling coexists with the intrinsic exchange interaction of transition-metal-d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and more interestingly, anomalous valley Hall effect. On account of the latter, a series of functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory, valley filter, are contemplated for valleytronic applications.