Topologically induced fractional Hall steps in the integer quantum Hall regime of $MoS_2$

TL;DR

This paper investigates how topological effects influence quantum Hall phenomena in monolayer MoS2, revealing fractional Hall steps and spin-valley polarization due to topological terms.

Contribution

It introduces the impact of topological terms on magnetotransport properties and fractional quantum Hall steps in monolayer MoS2.

Findings

Fractional Hall steps observed in the integer quantum Hall regime.

Complete spin and valley polarization of longitudinal conductivity.

Modulation of Shubnikov-de Hass oscillations by topological terms.

Abstract

The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. Especially, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms.