Observation of anti-levitation of Landau levels in vanishing magnetic fields

TL;DR

This study observes anti-levitation of Landau levels in vanishing magnetic fields within a high-quality hetero-junction transistor, revealing unique behaviors of Landau levels and the influence of exchange interactions.

Contribution

It reports the first experimental observation of anti-levitation of Landau levels in low magnetic fields, highlighting the role of exchange interactions.

Findings

Landau levels exhibit anti-levitation behavior in low magnetic fields.

Different behaviors observed between even and odd filling factors.

Exchange interactions may significantly influence Landau level behavior.

Abstract

We report an anti-levitation behavior of Landau levels in vanishing magnetic fields in a high quality hetero-junction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field, the positions of the magneto-resistance minima at Landau level fillings \nu=4, 5, 6 move below the 'traditional' Landau level line to lower electron densities. Moreover, the even and odd filling factors show quantitatively different behaviors in anti-levitation, suggesting that the exchange interactions may be important.