Valley Trion Dynamics in Monolayer MoSe$_2$

TL;DR

This study investigates the ultrafast valley trion dynamics in monolayer MoSe2 using pump-probe spectroscopy, revealing defect trapping as the main decay process and how decay rates depend on excitation density.

Contribution

It provides the first detailed analysis of valley trion dynamics in MoSe2 monolayers, highlighting defect trapping as the dominant decay mechanism and modeling the process with rate equations.

Findings

Trion formation occurs ultrafast after excitation.

Trion decay slows with increasing excitation density.

Defect trapping dominates the trion decay process.

Abstract

Charged excitons called trions play an important role in the fundamental valley dynamics in the newly emerging 2D semiconductor materials. We used ultrafast pump- probe spectroscopy to study the valley trion dynamics in a MoSe$_2$ monolayer grown by using chemical vapor deposition. The dynamics display an ultrafast trion formation followed by a non-exponential decay. The measurements at different pump fluences show that the trion decay dynamics become slower as the excitation density increases. The observed trion dynamics and the associated density dependence are a result of the trapping by two defect states as being the dominating decay mechanism. The simulation based on a set of rate equations reproduces the experimental data for different pump fluences. Our results reveal the important trion dynamics and identify the trapping by defect states as the primary trion decay mechanism in monolayer MoSe$_2$ under the excitation densities used in our experiment.