Memristive GaN ultrathin suspended membrane array

TL;DR

This paper demonstrates that ultrathin GaN membranes can function as memristive devices due to charge trap migration, with potential applications in nanoelectronics.

Contribution

It introduces a novel memristive behavior in 15 nm thick GaN membranes caused by deep trap migration during fabrication.

Findings

Membranes act as memristive devices due to charge migration.

Migration time constant is tens of seconds and depends on voltage.

Deep traps form during fabrication and influence device behavior.

Abstract

In this paper, we show that ultrathin GaN membranes having a thickness of 15 nm and planar dimensions of 12x184 microns act as memristive devices. This fact is due to the migration of the negatively charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of second and varies with the current or voltage sweep.