Room temperature nanostructured graphene transistors with high on-off ratio

TL;DR

This paper presents the fabrication of nanostructured graphene transistors operating at room temperature with exceptionally high on-off ratios and enhanced photoresponse, advancing graphene-based electronic and photonic devices.

Contribution

The study introduces a batch fabrication method for nanoperforated GFETs with tunable saturation and record-high on/off ratios at room temperature, and demonstrates superior photoresponse capabilities.

Findings

On/off ratio of up to 10^8 at room temperature

Enhanced photoresponse compared to existing graphene detectors

Tunable saturation regions via top gate voltage

Abstract

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by modifying the top gate voltage, and have on/off ratios of up to 10^8 at room temperature. In addition, the nanoperforated GFETs display orders of magnitude higher photoresponses than any room-temperature graphene detector configurations that do not involve heterostructures with bandgap materials.