Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2

TL;DR

This paper introduces a new solid-phase epitaxy method enabling high-temperature growth of multi-component materials with high vapor pressure elements, demonstrated on KFe2As2, potentially advancing spintronics applications.

Contribution

A novel solid-phase epitaxy technique that prevents re-vaporization of high vapor pressure elements during high-temperature growth.

Findings

Successful growth of high-quality KFe2As2 epitaxial films.

Technique applicable to other high vapor pressure element materials.

Potential for future spintronics device development.

Abstract

We propose a novel solid-phase epitaxy technique applicable to high annealing temperatures up to 1000 C without re-vaporization of alkali metal elements with high vapor pressures. This technique is demonstrated through the successful growth of high-quality KFe2As2 epitaxial films. The key factors are employing a custom-designed alumina vessel/cover and sealing it in a stainless tube with a large amount of atmospheric KFe2As2 powder in tightly closed sample spaces. This technique can also be effective for other materials composed of elements with very high vapor pressures, such as alkali metals, and can lead to the realization of spintronics devices in the future using KFe2As2.