Temperature and high fluence induced ripple rotation on Si(100) surface

TL;DR

This study investigates how temperature and ion fluence influence ripple pattern rotation on Si(100) surfaces during ion beam sputtering, revealing temperature-dependent morphological transitions and a surprising orthogonal ripple rotation at high temperatures.

Contribution

It demonstrates the temperature-induced transition and rotation of ripple patterns on Si(100), combining experimental observations with theoretical models to advance understanding of pattern formation mechanisms.

Findings

Ripple patterns are stable at room temperature across fluences.

Elevated temperatures cause ripple pattern demolition into mound-like structures.

Above 400°C, ripple patterns rotate orthogonally at high fluences.

Abstract

Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each temperature, the ion fluence is systematically varied in a wide range from $\sim$ 1$\times$10$^{18}$cm$^{-2}$ to 1$\times$10$^{20}$cm$^{-2}$. The ion sputtered surface morphologies are characterized by atomic force microscopy and high-resolution cross-sectional transmission electron microscopy. At room temperature, the ion sputtered surfaces show periodic ripple nanopatterns and their wave-vector remains parallel to ion beam projection for entire fluence range. With increase of substrate temperature, these patterns tend to demolish and reduce into randomly ordered mound-like structures around 350$^{\circ}$C. Further rise in temperature above 400$^{\circ}$C leads, surprisingly, orthogonally rotated ripples beyond fluence 5$\times$10$^{19}$cm$^{-2}$. All the results are discussed combining the theoretical framework of linear, non-linear and recently developed mass redistribution continuum models of pattern formation by IBS. These results have technological importance regarding the control over ion induced pattern formation as well as it provides useful information for further progress in theoretical field.