Some aspects of epitaxial thin film growth

TL;DR

This paper explores computational modeling of sputtering processes for thin film growth, analyzing atomic layer deposition, sputtering parameters, and film development for materials like Bismuth, TiOx, and TiN.

Contribution

It provides detailed simulations of sputtering and atomic layer deposition processes, highlighting how parameters influence film characteristics and introducing new modeling insights.

Findings

Deposition angle and ion flux affect Bismuth layer growth.

Sputtering yield varies with coverage and pressure.

Simulations show how parameters control TiOx and TiN film properties.

Abstract

The article consists of four sections all dealing with the computational modeling of the sputtering process. The first section deals with the difference in Bismuth atomic layer deposition at different polar angle and ion flounce. In the second section, atomic layer deposition was studied as a function of incident Argon ion energy at different pressure conditions. A curve analogous to Bragg curve was obtained .In the third section TiOx films was developed by simulations. The sputtering parameters were varied to get different atomic layers. The variation of coverage with sticking coefficient was shown. The last section deals with sputter based deposition of TiN films. The rate of change of partial sputtering yield with coverage was considered. The deposition pressure and time were varied to get films of different thickness. All the sections are stored separately