Localized and mixed valence state of Ce $4f$ in superconducting and ferromagnetic CeO$_{1-x}$F$_{x}$BiS$_{2}$ revealed by x-ray absorption and photoemission spectroscopy
T. Sugimoto, D. Ootsuki, E. Paris, A. Iadecola, M. Salome, E. F., Schwier, H. Iwasawa, K. Shimada, T. Asano, R. Higashinaka, T. D. Matsuda, Y., Aoki, N. L. Saini, and T. Mizokawa

TL;DR
This study investigates the electronic states of Ce in CeO$_{1-x}$F$_x$BiS$_2$ using X-ray absorption and photoemission spectroscopy, revealing mixed valence behavior and localized Ce $4f$ electrons affected by F doping.
Contribution
It provides new insights into the Ce valence state and $4f$ electron localization in CeO$_{1-x}$F$_x$BiS$_2$, highlighting the effects of F doping on electronic structure.
Findings
Ce exhibits mixed valence in the undoped sample, suppressed by F doping.
Ce $4f$ electrons form flat bands below the Fermi level with no contribution to Fermi surfaces.
Ce valence deviates from Ce$^{3+}$ despite localized $4f$ electrons, indicating non-fluctuating valence.
Abstract
We have performed Ce -edge x-ray absorption spectroscopy (XAS) and Ce - resonant photoemission spectroscopy (PES) on single crystals of CeOFBiS for and 0.5 in order to investigate the Ce electronic states. In the Ce -edge XAS, mixed valence of Ce was found in the sample and the F-doping suppresses it, which is consistent with the results on polycrystalline samples. As for the resonant PES, we found that the Ce electrons in both and systems respectively form a flat band at 1.0 eV and 1.4 eV below the Fermi level and there is no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS deviates from Ce even though Ce electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce in CeOBiS is mixed with the…
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