Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals

TL;DR

This paper reports the observation of extremely large and anisotropic magnetoresistance in ZrSiS single crystals, highlighting its potential for magnetic sensor applications due to electron-hole compensation and Fermi surface properties.

Contribution

It presents the first detailed measurement of large, anisotropic magnetoresistance in ZrSiS, linking it to electronic structure features.

Findings

Magnetoresistance of 3.0×10^4% at 2 K and 9 T

Magnetoresistance change of 1.4×10^4% when magnetic field orientation varies

Attribution of MR behavior to electron-hole compensation and Fermi surface topology

Abstract

Recently, the extremely large magnetoresistance observed in transition metal telluride, like WTe$_2$, attracted much attention because of the potential applications in magnetic sensor. Here we report the observation of extremely large magnetoresistance as 3.0$\times$10$^4$ % measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (~1.4$\times$10$^4$ %) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the novel magnetic sensors.