UV-photoelectric effect for augmented contrast and resolution in electron microscopy

TL;DR

This paper introduces a novel method using deep-UV illumination during SEM imaging to enhance material contrast and resolution through the photoelectric effect, enabling faster, more accurate nanoscale imaging.

Contribution

It presents a new UV-photoelectric technique for SEM that improves contrast, resolution, and imaging speed, and reduces surface charging distortions.

Findings

Enhanced material contrast in SEM images.

Higher resolution imaging due to photoelectric effect.

Reduced surface charging and distortion.

Abstract

A new tool providing material contrast control in scanning electron microscopy (SEM) is demonstrated. The approach is based on deep-UV illumination during SEM imaging and delivers a novel material based contrast as well as higher resolution due to the photoelectric effect. Electrons liberated from illuminated sample surface contribute to the imaging which can be carried out at a faster acquisition rate, provide material selective contrast, reduce distortions caused by surface charging, and can substitute metal coating in SEM. These features provide high fidelity SEM imaging and are expected to significantly improve the performance of electron beam instruments as well as to open new opportunities for imaging and characterization of materials at the nanoscale.