Design Rules for High Performance Tunnel Transistors from 2D Materials

TL;DR

This paper provides design guidelines for 2D material-based tunnel transistors, analyzing doping methods and performance enhancements like strain and doping, using simulations and a new figure-of-merit for optimized device performance.

Contribution

It introduces comprehensive design rules for electrically and chemically doped 2D TFETs, incorporating performance boosters and a novel figure-of-merit analysis.

Findings

Design guidelines for doped 2D TFETs established

Performance boosters like strain and doping improve device metrics

A new figure-of-merit plot aids in performance optimization

Abstract

Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical doping. In this work, design guidelines for both electrically and chemically doped 2D TFETs are provided using full band atomistic quantum transport simulations in conjunction with analytic modeling. Moreover, several 2D TFETs' performance boosters such as strain, source doping, and equivalent oxide thickness (EOT) are studied. Later on, these performance boosters are analyzed within a novel figure-of-merit plot (i.e. constant ON-current plot).