Large linear magnetoresistance in a new Dirac material BaMnBi2

TL;DR

This study synthesizes high-quality BaMnBi2 crystals and explores their transport properties, revealing anisotropic Dirac fermion states and unique magnetoresistance behavior indicative of a quasi-two-dimensional Fermi surface.

Contribution

The paper reports the discovery of large linear magnetoresistance and anisotropic Dirac fermion states in BaMnBi2, a new Dirac material, with detailed transport and magnetic property analysis.

Findings

Electron-type carriers with high mobility at 5K

Quasi-two-dimensional Fermi surface observed

Crossover in magnetoresistance behavior at high fields

Abstract

We report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. The Hall data reveals electron-type carriers and a mobility mu(5K) =1500cm2/Vs. The temperature dependence of magnetization displays behavior that is different from CaMnBi2 or SrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2. Angle-dependent magnetoresistance reveals the quasi-two-dimensional Fermi surface. A crossover from semiclassical MR-H2 dependence in low field to MR-H dependence in high field is observed in transverse magnetoresistance. Our results indicate the anisotropic Dirac fermion states in BaMnBi2.