Atomically thin quantum light emitting diodes
Carmen Palacios Berraquero, Matteo Barbone, Dhiren M. Kara, Xiaolong, Chen, Ilya Goykhman, Duhee Yoon, Anna K. Ott, Jan Beitner, Kenji Watanabe,, Takashi Taniguchi, Andrea C. Ferrari, Mete Atat\"ure
TL;DR
This paper demonstrates electrically driven single-photon emission from atomically thin TMD materials, showcasing their potential for integrated quantum photonics devices.
Contribution
It reports the first realization of electrically driven single-photon emission in atomically thin TMDs using a novel heterostructure device.
Findings
Single-photon emission confirmed via photon correlation measurements
Successful fabrication of TMD-based light emitting diodes
Potential for integration into quantum photonics applications
Abstract
Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the TMD family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
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