Switching local magnetization by electric-field-induced domain wall motion

TL;DR

This paper demonstrates that applying a gate electric field can switch the local magnetization in ultra-thin Co films by inducing domain wall motion, enabling low-energy, field-free spintronic devices.

Contribution

It introduces a novel method for magnetization switching using electric fields without external magnetic fields or currents, advancing low-energy spintronics.

Findings

Magnetization can be switched by electric fields alone.

Domain wall motion is driven by electric field-induced nucleation and annihilation.

Potential for ultra-low energy, field-free spintronic applications.

Abstract

Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the magnetic domain through the domain wall motion induced by the electric field. Our results lead to external field free and ultra-low energy spintronic applications.