Monolayer MXenes: promising half-metals and spin gapless semiconductors
Guoying Gao, Guangqian Ding, Jie Li, Kailun Yao, Menghao Wu and, Meichun Qian

TL;DR
This study uses first-principles calculations to reveal that certain monolayer MXenes exhibit promising half-metallic and spin gapless semiconducting properties, making them potential candidates for spintronic devices.
Contribution
It demonstrates for the first time that monolayer Ti2C and Ti2N can intrinsically exhibit nearly half-metallic ferromagnetism and spin gapless semiconducting behavior under strain.
Findings
Ti2C and Ti2N show nearly half-metallic ferromagnetism.
Strain induces phase transitions to half-metal and spin gapless semiconductor.
Structures are stable according to formation energy and phonon spectrum.
Abstract
Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate from first-principles calculations that monolayer Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00 UB per formula unit, respectively, while monolayer V2C is a metal with instable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a proper biaxial strain. Large magnetic moments…
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