Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

TL;DR

This paper presents testbeam results of a 180 nm AMS High-Voltage CMOS sensor prototype, evaluating its tracking efficiency and timing performance for potential use in the ATLAS pixel tracker at the High-Luminosity LHC.

Contribution

It provides the first detailed testbeam performance analysis of a 180 nm AMS High-Voltage CMOS sensor prototype for high-energy physics applications.

Findings

High tracking efficiency achieved under certain conditions

Good timing performance demonstrated

Sensor shows promise for future pixel tracker use

Abstract

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.