Resonant levels, vacancies and doping in Bi2Te3, Bi2Te2Se and Bi2Se3 tetradymites
Bartlomiej Wiendlocha

TL;DR
This study uses first principles calculations to analyze how dopants and vacancies affect the electronic structure of tetradymites, revealing the formation of resonant levels and proposing strategies to optimize thermoelectric properties.
Contribution
It predicts the formation of resonant levels by Sn in Bi2Te2Se and Bi2Se3, and suggests double-doping as an effective method to preserve these levels.
Findings
Sn forms resonant levels in Bi2Te2Se and Bi2Se3
Vacancies act as donors and are unaffected by Sn doping
Double-doping can optimize resonant level formation
Abstract
Electronic structures of the tetradymites, BiTe, BiTeSe and BiSe, containing various dopants and vacancies, are studied using the first principles calculations methods. We focus on the possibility of formation of the resonant levels (RL), confirming the formation of the RL by Sn in BiTe, and predicting similar behavior of Sn in BiTeSe and BiSe. Vacancies, which are likely present on the chalcogen atoms in the real samples of BiTeSe and BiSe, are also studied and their charged donor and resonant behavior is discussed. Doping of the vacancy-containing materials with regular acceptors, like Ca or Mg, is shown to compensate the donor effect of vacancies, and crossover, while increasing the dopant concentration, is observed. We verify, that RL on Sn is not disturbed by the chalcogen vacancies in BiTeSe and…
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