Monolithically integrated single quantum dots coupled to bowtie nanoantennas

TL;DR

This paper demonstrates the monolithic integration of single InAs quantum dots with bowtie nanoantennas, achieving significant emission enhancement and polarization control, advancing nanoscale quantum photonics applications.

Contribution

It presents the first demonstration of strongly enhanced light-matter coupling of quantum dots with plasmonic nanoantennas in a CMOS-compatible, monolithic platform.

Findings

Emission intensity increased by up to 16 times

Purcell factor enhanced by up to 3.4 times

Emission polarization up to 85% linear polarization

Abstract

Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters are needed, which moreover allow for CMOS-compatibility and optical activity in the telecommunication band. Here, we demonstrate strongly enhanced light-matter coupling of single near-surface ($<10\,nm$) InAs quantum dots monolithically integrated into electromagnetic hot-spots of sub-wavelength sized metal nanoantennas. The antenna strongly enhances the emission intensity of single quantum dots by up to $\sim16\times$, an effect accompanied by an up to $3.4\times$ Purcell-enhanced spontaneous emission rate. Moreover, the emission is strongly polarised along the antenna axis with degrees of linear polarisation up to $\sim85\,\%$. The results unambiguously demonstrate the efficient coupling of individual quantum dots to state-of-the-art nanoantennas. Our work provides new perspectives for the realisation of quantum plasmonic sensors, step-changing photovoltaic devices, bright and ultrafast quantum light sources and efficent nano-lasers.