A DFT+U study on the contribution of 4f electrons to oxygen vacancy formation and migration in Ln-doped CeO2

TL;DR

This study uses DFT+U calculations to explore how 4f electrons influence oxygen vacancy formation and migration in Ln-doped CeO2, revealing the significance of 4f orbital occupancy in oxygen ion conduction.

Contribution

It provides new insights into the role of 4f electrons in doped CeO2, highlighting their impact on oxygen vacancy behavior and ion conduction mechanisms.

Findings

4f orbital occupancy affects oxygen vacancy formation

Covalent interactions influence oxygen migration

Early Ln elements show significant 4f electron effects

Abstract

Rare-earth doped form, ceria (CeO2) is of interest as a potential candidate for solid oxide fuel cells (SOFCs) because of its relatively high oxygen ion conductivity at temperatures below 600 {\deg}C. At the present time, computational chemistry has reached a certain maturity which allows prediction of materials properties that are difficult to observe experimentally. However, understanding of the roles of dopants on the oxygen ion conduction in CeO2 is still incomplete for quantitatively reliable analysis due to strong electron correlation of 4f electrons. In this study, density functional theory calculations with Hubbard U corrections are conducted to discuss ionic/covalent interactions in rare-earth-doped CeO2 and their consequences to oxygen ion conduction. The study suggests that the variable occupancy of empty 4f orbitals is important typically for early Ln elements to produce the covalent interactions that essentially affect formation and migration of oxygen vacancies. This finding is important in understanding the factors responsible for oxygen ion diffusion in doped CeO2.